AP1334GEU-HF
6
800
f=1.0MHz
I
D
=6A
5
V
DS
= 10 V
600
V
GS
, Gate to Source Voltage (V)
C
iss
4
3
C (pF)
400
2
200
1
0
0
4
8
12
16
20
0
1
5
9
13
17
C
rss
C
oss
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thja
)
Duty factor=0.5
1
I
D
(A)
100us
1ms
0.2
0.1
0.1
10ms
0.1
0.05
P
DM
t
T
0.02
100ms
T
A
=25 C
Single Pulse
o
1s
DC
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=450℃/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
4
V
DS
=5V
T
j
=-40
o
C
I
D
, Drain Current (A)
30
I
D
, Drain Current (A)
3
T
j
=25
o
C
T
j
=150 C
o
3
20
2
10
1
0
0
0
1
2
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature ( C )
o
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
