Advanced Power
Electronics Corp.
FEATURES
Ideal for DDR-I, DDR-II and DDR-III V
TT
Applications
Sink and Source up to 2Amp
Integrated Power MOSFETs
Generates Termination Voltage for SSTL_2, SSTL_18,
HSTL, SCSI-2 and SCSI-3 Interfaces.
High Accuracy Output Voltage at Full-Load
Output Adjustment by Two External Resistors
Built-in Soft-start Function
Shutdown for Suspend to RAM (STR) Functionality
with High-Impedance Output
Current Limiting Protection
On-Chip Thermal Protection
Available in ESOP-8 (Exposed Pad) Packages
V
IN
and V
CNTL
Under Voltage Protection
RoHS Compliant and 100% Lead (Pb)-Free
AP1280AMP
DESCRIPTIOON
The AP1280AMP is a simple, cost-effective and
high-speed linear regulator designed to generate
termination voltage in double data rate (DDR) memory
system to comply with the JEDEC SSTL_2 and
SSTL_18 or other specific interfaces such as HSTL,
SCSI-2 and SCSI-3 etc. devices requirements. The
regulator is capable of actively sinking or sourcing up to
2A while regulating an output voltage to within 40mV.
The output termination voltage cab be tightly regulated
to track 1/2V
DDQ
by two external voltage divider resistors
or the desired output voltage can be pro-grammed by
externally forcing the REFEN pin voltage.
The AP1280AMP also incorporates a high-speed
differential amplifier to provide ultra-fast response in
line/load transient. Other features include extremely low
initial offset voltage, excellent load regulation, current
limiting in bi-directions and on-chip thermal shut-down
protection.Built-in
softstart
function
avoids
a
misoperation by inrush current.
The AP1280AMP are available in the ESOP-8
(Exposed Pad) surface mount packages.
2A SINK/SOURCE BUS TERMINATION REGULATOR
APPLICATION
Desktop PCs, Notebooks, and Workstations
Graphics Card Memory Termination
Set Top Boxes, Digital TVs, Printers
Embedded Systems
Active Termination Buses
DDR-I, DDR-II and DDR-III Memory Systems
TYPICAL APPLICATION
VIN
VCNTL
VIN
CIN
R1
VCNTL
CCNTL
AP1280AMP
RTT
VOUT
REFEN
Shutdown
R2
CSS
VOUT
COUT
RDUMMY
GND
Enable
R1 = R2 = 100KΩ , RTT = 50Ω / 33Ω / 25Ω
COUT = 10uF ( + 100uF under the worst case testing condition )
CSS = 1uF , CIN = 470 uF (Low ESR) , CCNTL = 47uF
Data and specifications subject to change without notice
1
201204134