AP1203GMA
f=1.0MHz
12
10000
I
D
=20A
V
GS
, Gate to Source Voltage (V)
V
DS
= 13 V
V
DS
= 16 V
V
DS
=20V
C (pF)
1000
9
6
C
iss
3
C
oss
C
rss
0
0
10
20
30
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
0.1
I
D
(A)
0.1
0.05
100us
10
P
DM
0.02
1ms
o
T
C
=25 C
Single Pulse
t
0.01
T
Single Pulse
1
0.1
1
10
10ms
100ms
DC
100
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
80
V
DS
=5V
60
V
G
Q
G
T
j
=25 C
o
I
D
, Drain Current (A)
T
j
=150 C
o
4.5V
Q
GS
Q
GD
40
20
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4