AP11N50I
20
12
T
C
=25 C
16
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10 V
7.0 V
6.0 V
T
C
=150 C
10
o
10V
7.0 V
6.0 V
5.0V
8
12
6
8
V
G
= 4.5V
4
5.0V
4
V
G
= 4.5 V
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
2
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
2.4
I
D
=6A
V
G
=10V
Normalized BV
DSS
(V)
1.1
Normalized R
DS(ON)
2.0
1
1.6
1.2
0.9
0.8
0.8
-50
0
50
100
150
0.4
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature (
o
C)
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.3
T
j
=150
o
C
6
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.1
I
S
(A)
4
0.9
2
0.7
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3