AP10N70S
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
o
Test Conditions
V
GS
=0V, I
D
=1.0mA
V
GS
=10V, I
D
=5.0A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=±30V
I
D
=10A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=10A
R
G
=10Ω,V
GS
=10V
R
D
=30Ω
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
600
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5
-
-
-
35.9
8.3
11.5
14.9
19.7
51.7
23.3
630
20
2
Max. Units
-
0.6
4
-
10
100
±100
57
-
-
-
-
-
-
-
-
3
V
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3
1950 3120
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
3
3
Test Conditions
T
j
=25℃, I
S
=10A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
575
10.6
Max. Units
1.5
-
-
V
ns
uC
t
rr
Q
rr
Notes:
Reverse Recovery Time
Reverse Recovery Charge
1.Pulse width limited by Max. junction temperature.
o
2.Starting T
j
=25 C , V
DD
=50V , L=1.0mH , R
G
=25Ω , I
AS
=10A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
