AP09N90CW
15
10000
f=1.0MHz
I
D
=7.2A
V
GS
, Gate to Source Voltage (V)
12
9
V
DS
=180V
V
DS
=360V
V
DS
=540V
C (pF)
Ciss
1000
6
100
Coss
3
Crss
0
10
0
20
40
60
80
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Normalized Thermal Response (R
thjc
)
DUTY=0.5
10ms
I
D
(A)
1
0.2
0.1
100ms
1s
DC
0.1
0.05
P
DM
t
0.02
0.1
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
T
c
=25 C
Single Pulse
0.01
0.1
1
10
100
1000
10000
o
0.01
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
