AP09N70P/R
f=1.0MHz
16
10000
14
I
D
=9A
Ciss
V
GS
, Gate to Source Voltage (V)
12
V
DS
=320V
V
DS
=400V
C (pF)
V
DS
=480V
Coss
100
10
8
6
Crss
4
2
0
0
10
20
30
40
50
60
70
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
5
4
10
I
S
(A)
T
j
= 25
o
C
V
GS(th)
(V)
T
j
= 150
o
C
3
2
1
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature ( C)
o
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature