AP09N70I-A
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Dynamic dv/dt Rating
▼
Repetitive Avalanche Rated
▼
Fast Switching
▼
Simple Drive Requirement
▼
RoHS Compliant
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
650V
0.75Ω
9A
G
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
S
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
650
±30
9
5
40
42
0.34
305
9
9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
3
65
Units
℃/W
℃/W
200711051-1/4
Data & specifications subject to change without notice