AP09N20H/J
15
1000
f=1.0MHz
I
D
=8.6A
V
GS
, Gate to Source Voltage (V)
12
Ciss
V
DS
=100V
V
DS
=120V
V
DS
=160V
C (pF)
100
9
Coss
6
Crss
3
0
0
6
12
18
24
30
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
1ms
10
0.2
10ms
I
D
(A)
100ms
1
0.1
0.1
0.05
1s
P
DM
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
T
c
=25 C
Single Pulse
0
1
10
100
o
DC
0.01
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
