AP09N90CW-HF
10
5
T
C
=25 C
8
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
T
C
=150 C
4
o
10V
7.0V
5.0V
4.5V
6
3
4
4.5V
2
V
G
=4.0V
1
2
V
G
=4.0V
0
0
2
4
6
8
10
12
14
16
18
0
0
2
4
6
8
10
12
14
16
18
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3.0
I
D
=3.6A
2.5
V
G
=10V
Normalized BV
DSS
(V)
1.1
Normalized R
DS(ON)
2.0
1
1.5
1.0
0.9
0.5
0.8
-50
0
50
100
150
0.0
-50
0
50
100
150
Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Fig 4. Normalized On-Resistance
100
4
T
j
= 150
o
C
T
j
= 25
o
C
V
GS(th)
(V)
10
3
I
S
(A)
1
2
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
