AP09N20H/J-HF
18
10
16
T
C
=25 C
o
10V
8.0V
8
T
C
=150
o
C
I
D
, Drain Current (A)
I
D
, Drain Current (A)
14
10V
8.0V
7.0V
12
7.0V
6
10
8
4
6
4
5.0V
5.0V
2
2
V
G
=4.0V
0
0
2
4
6
8
10
12
0
2
4
6
8
V
G
=4.0V
0
10
12
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
2.8
2.4
1.4
I
D
=5A
V
GS
=10V
Normalized BV
DSS
(V)
Normalized R
DS(ON)
-50
0
50
100
150
2
1.2
1.6
1.2
1
0.8
0.8
0.4
0.6
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
7
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
6
4
5
4
V
GS(th)
(V)
T
j
=150
o
C
T
j
=25
o
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
I
S
(A)
3
3
2
2
1
0
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
