AP0903GMA
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
35
-
-
-
17
5
10.3
8.2
105
21.4
8.5
245
170
1.5
Max. Units
-
-
9
18
3
-
1
250
±100
26
-
-
-
-
-
-
-
-
2.3
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=33A
V
GS
=4.5V, I
D
=20A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=33A
V
DS
=30V, V
GS
=0V
V
DS
=24V ,V
GS
=0V
V
GS
=±20V
I
D
=33A
V
DS
=20V
V
GS
=4.5V
V
DS
=15V
I
D
=33A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.45Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1485 2400
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=60A, V
GS
=0V
I
S
=30A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
29
12
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board.
4.Starting T
j
=25
o
C , V
DD
=25V , L=0.1mH , R
G
=25Ω
2/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
