AP0903GYT-HF
40
40
T
A
=25 C
o
I
D
, Drain Current (A)
30
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
A
=150
o
C
30
10V
7.0V
6.0V
5.0V
V
G
=4.0V
20
20
10
10
0
0.0
1.0
2.0
3.0
4.0
0
0.0
2.0
4.0
6.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
2.0
I
D
=8A
14
T
A
=25 C
1.6
o
I
D
=10A
V
G
=10V
R
DS(ON)
(m
Ω
)
Normalized R
DS(ON)
12
10
1.2
8
0.8
6
4
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
T
j
=150 C
8
o
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.2
I
S
(A)
6
4
0.8
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
