AP08N60I-HF
12
4000
f=1.0MHz
I
D
=4A
V
GS
, Gate to Source Voltage (V)
10
3000
8
C (pF)
V
DS
=480V
6
C
iss
2000
4
1000
2
0
0
20
40
60
80
0
C
oss
C
rss
1
5
9
13
17
21
25
29
33
37
Q
G
, Total Gate Charge (nC)
V
DS ,
Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thjc
)
0.2
I
D
(A)
100us
1ms
1
0.1
0.1
0.05
0.02
10ms
0.1
0.01
P
DM
0.01
Single Pulse
T
c
=25
o
C
Single Pulse
0.01
0.1
1
10
100
100ms
1s
DC
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
4.3
0.001
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4