AP07S60H-HF
12
f=1.0MHz
2400
10
I
D
=3.5A
V
DS
=480V
2000
V
GS
, Gate to Source Voltage (V)
8
1600
6
C (pF)
0.37Ω
1200
4
800
C
iss
2
400
C
oss
C
rss
0
0
8
16
24
32
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
10
0.2
I
D
(A)
Operation in this area
limited by R
DS(ON)
100us
0.1
0.1
0.05
1
1ms
10ms
100ms
1s
DC
100
1000
P
DM
t
0.02
T
0.01
T
c
=25
o
C
Single Pulse
0.1
1
10
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
10
V
G
8
I
D
, Drain Current (A)
Q
G
10V
6
Q
GS
4
Q
GD
2
Charge
0
25
50
75
100
125
150
Q
T
C
, Case Temperature (
o
C )
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
