AP07N70CI-H
12
9
T
C
=25
o
C
I
D
, Drain Current (A)
10V
6.0V
5.5V
I
D
, Drain Current (A)
6
T
C
=150
o
C
8
10V
6.0V
5.5V
5.0V
5.0V
4
3
V
G
=4.0V
V
G
=4.0V
0
0
5
10
15
20
25
0
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=3.5A
V
G
=10V
Normalized BV
DSS
(V)
1.1
Normalized R
DS(ON)
2
1.0
1
0.9
0.8
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
100
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
10
4
T
j
= 150 C
o
T
j
= 25
o
C
V
GS(th)
(V)
2
0
-50
I
S
(A)
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
50
100
150
V
SD
,Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
