AP0603GMA
f=1.0MHz
16
10000
I
D
=30A
V
GS
, Gate to Source Voltage (V)
12
C (pF)
V
DS
=15V
V
DS
=20V
V
DS
=24V
C
iss
8
1000
C
oss
C
rss
4
0
100
0
20
40
60
80
1
6
11
16
21
26
31
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
0.1
I
D
(A)
0.1
0.05
1ms
10
P
DM
0.02
t
T
0.01
Single Pulse
T
c
=25
o
C
Single Pulse
1
0.1
1
10
10ms
100ms
DC
100
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
V
DS
=5V
I
D
, Drain Current (A)
90
V
G
Q
G
4.5V
Q
GS
Q
GD
T
j
=25 C
o
T
j
=150 C
o
60
30
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4