AP05N50EH/J-HF
8
5
T
C
=25 C
I
D
, Drain Current (A)
6
o
I
D
, Drain Current (A)
10V
8.0V
7.0V
6.0V
T
C
=150
o
C
4
10V
8.0V
7.0V
6.0V
V
G
=5.0V
3
4
2
V
G
=5.0V
2
1
0
0
4
8
12
16
20
24
0
0
5
10
15
20
25
30
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=1mA
I
D
=2A
V
G
=10V
1.1
Normalized BV
DSS
(V)
Normalized R
DS(ON)
2
1
1
0.9
0.8
-40
0
40
80
120
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
8
1.5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
I
D
=250uA
6
Normalized V
GS(th)
(V)
1.2
1
I
S
(A)
4
T
j
= 150
o
C
T
j
= 25
o
C
0.5
2
0
0
0.2
0.4
0.6
0.8
1
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
