AP0503GMA
f=1.0MHz
15
10000
I
D
=30A
12
C
iss
V
DS
=15V
V
DS
=20V
V
DS
=24V
V
GS
, Gate to Source Voltage (V)
9
C (pF)
1000
6
C
oss
C
rss
3
0
100
0
30
60
90
120
150
1
6
11
16
21
26
31
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
0.1
I
D
(A)
0.1
0.05
1ms
10
P
DM
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
T
c
=25 C
Single Pulse
1
o
10ms
100ms
DC
1
10
100
0.01
0.01
0.1
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
V
DS
=5V
80
V
G
Q
G
I
D
, Drain Current (A)
60
T
j
=25
o
C
T
j
=150
o
C
4.5V
Q
GS
Q
GD
40
20
Charge
0
0
1
2
3
4
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
