AP04N70BF-A
f=1.0MHz
16
10000
I
D
=4A
V
GS
, Gate to Source Voltage (V)
12
8
C (pF)
V
DS
=320V
V
DS
=400V
V
DS
=480V
C
iss
100
C
oss
4
C
rss
0
0
5
10
15
20
25
1
1
6
11
16
21
26
31
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
10us
100us
1
Normalized Thermal Response (R
thjc
)
0.2
I
D
(A)
0.1
1ms
10ms
0.1
0.05
P
DM
0.02
0.1
100ms
T
c
=25 C
Single Pulse
o
t
T
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
1
10
100
1000
10000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
(V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
