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AP04N80I-HF 参数 Datasheet PDF下载

AP04N80I-HF图片预览
型号: AP04N80I-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 115 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP04N80I-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
800V
4.5Ω
3.2A
Description
AP04N80 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
G
D
TO-220CFM type provide high blocking voltage to overcome voltage
surge and sag in the toughest power system with the best combination
of fast switching, ruggedized design and cost-effectiveness.
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Single Pulse Avalanche Energy
3
Storage Temperature Range
Operating Junction Temperature Range
Rating
800
+30
3.2
1.7
12
34.7
4.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.6
65
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201211084