AP04N70BP-A
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
650
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
2.5
-
-
-
16.7
4.1
4.9
11
8.3
23.8
8.2
950
65
6
Max. Units
-
-
2.4
4
-
10
100
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
GS
=10V, I
D
=2A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=2A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=±30V
I
D
=4A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=4A
R
G
=10Ω,V
GS
=10V
R
D
=75Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , V
DD
=50V , L=25mH , R
G
=25Ω , I
AS
=4A.
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.5V
1
Min.
-
-
-
Typ.
-
-
-
Max. Units
4
15
1.5
A
A
V
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
T
j
=25℃, I
S
=4A, V
GS
=0V
3.Pulse width <300us , duty cycle <2%.
2/6
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
