AP03N70F
f=1.0MHz
16
10000
I
D
=3.3A
14
V
DS
=480V
V
GS
, Gate to Source Voltage (V)
12
Ciss
10
8
C (pF)
100
6
Coss
4
Crss
2
0
0
2
4
6
8
10
12
14
16
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
5
4
10
T
j
= 150
o
C
T
j
= 25
o
C
1
3
V
GS(th)
(V)
I
S
(A)
2
0.1
1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature ( C)
o
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature