AP03N70I-H-HF
16
800
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
12
I
D
=1A
V
DS
=480V
600
C
iss
8
C (pF)
400
4
200
0
0
4
8
12
16
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
100us
1
Normalized Thermal Response (R
thjc
)
Operation in this
area limited by
R
DS(ON)
Duty factor=0.5
0.2
I
D
(A)
0.1
1ms
10ms
100ms
1s
DC
o
T
c
=25 C
Single Pulse
0.01
0.1
0.05
0.02
P
DM
0.1
t
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4