AP03N70H/J
16
10000
f=1.0MHz
14
V
GS
, Gate to Source Voltage (V)
12
I
D
=3.3A
V
DS
=480V
C
iss
10
C (pF)
8
100
6
C
oss
4
2
C
rss
1
0
4
8
12
16
1
5
9
13
17
21
25
29
0
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Normalized Thermal Response (R
thjc
)
DUTY=0.5
0.2
100us
I
D
(A)
1
0.1
0.05
0.02
1ms
10ms
0.1
0.01
P
DM
t
Single Pulse
0.1
T
c
=25 C
Single Plude
0.01
1
10
100
o
100ms
DC
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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