AP03N70H/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
∆BV
DSS
/∆T
j
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=1.6A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=1.6A
V
DS
=600V, V
GS
=0V
V
GS
=+30V
I
D
=3.3A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=3.3A
R
G
=10Ω,V
GS
=10V
R
D
=91Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
600
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
2
-
-
-
11.4
3.1
4.2
8.4
6
17.7
5.9
600
45
4
Max. Units
-
-
3.6
4
-
10
100
+100
-
-
-
-
-
-
-
-
-
-
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=480V
,
V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting T
j
=25 C , V
DD
=50V , L=10mH , R
G
=25Ω , I
AS
=2.5A.
Parameter
Forward On Voltage
3
3
Test Conditions
I
S
=3A, V
GS
=0V
I
S
=3A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
422
2580
Max. Units
1.5
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
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HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
