AP03N40AI-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=1.3A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=1.3A
V
DS
=320V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=1A
V
DS
=320V
V
GS
=10V
V
DD
=200V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
400
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
2
-
-
11
2.5
5
8
4.5
17
10
370
45
9
3.2
Max. Units
-
2.6
4
-
25
+100
17.5
-
-
-
-
-
-
600
-
-
6.4
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Ensure that the channel temperature does not exceed 150
o
C
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=1.3A, V
GS
=0V
I
S
=1A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
150
820
Max. Units
1.5
-
-
V
ns
nC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
