AP02N90H/J
2.0
1.25
T
C
=25
o
C
1.6
I
D
, Drain Current (A)
1.2
I
D
, Drain Current (A)
10V
8.0V
6.0V
5.0V
T
C
=150
o
C
1.00
10V
8.0V
6.0V
5.0V
V
G
=4.5V
0.75
0.8
0.50
0.4
V
G
=4.5V
0.25
0.0
0.00
0
3
6
9
12
15
18
0
3
6
9
12
15
18
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
2.4
1.1
Normalized BV
DSS
(V)
Normalized R
DS(ON)
2.0
I
D
= 0.85 A
V
G
=10V
1.6
1.0
1.2
0.8
0.9
0.4
0.8
-50
0
50
100
150
0.0
-50
0
50
100
150
Junction Temperature (
o
C)
T
j
, Junction Temperature (
o
C )
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
2.0
1.6
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
Normalized V
GS(th)
(V)
T
j
=150
o
C
I
S
(A)
1.0
T
j
=25
o
C
1.2
0.8
0.5
0.0
0
0.2
0.4
0.6
0.8
1
1.2
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
