AP02N90H/J
f=1.0MHz
14
1000
12
I
D
= 1.9 A
V
DS
= 180 V
V
DS
= 360 V
V
DS
= 540 V
C (pF)
C
iss
V
GS
, Gate to Source Voltage (V)
10
100
8
C
oss
6
10
4
C
rss
2
0
0
4
8
12
16
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10.00
1
Normalized Thermal Response (R
thjc
)
DUTY=0.
10us
1.00
0.2
I
D
(A)
100us
1ms
0.1
0.1
0.05
P
DM
0.10
T
C
=25
o
C
Single Pulse
0.01
0.1
1
10
100
10ms
100ms
DC
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
SINGLE
0.01
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
