AP02N90H/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching Characteristics
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
900V
7.2Ω
1.9A
Description
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP02N90J) is available for low-profile
applications.
G D
S
TO-252(H)
G
D S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
4
Rating
900
+30
1.9
1.2
6
62.5
0.5
2
18
1.9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
W
mJ
A
℃
℃
Single Pulse Avalanche Energy
2
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value
2
62.5
110
Units
℃/W
℃/W
℃/W
1
201008115
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
