AP02N70EI-HF
2
2
T
C
=25 C
2
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
9.0V
8.0V
7.0V
T
C
=150
o
C
2
10V
9.0V
8.0V
7.0V
V
G
=6.0V
2
1
V
G
=6.0V
1
1
1
0
0
0
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.4
2.0
I
D
=0.8A
V
G
=10V
Normalized BV
DSS
(V)
1.2
1.6
Normalized R
DS(ON)
1
1.2
0.8
0.8
0.6
-50
0
50
100
150
0.4
-50
0
50
100
150
Tj , Junction Temperature (
℃
)
T
j
, Junction Temperature (
℃
)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
5
T
j
=150 C
4
o
T
j
=25 C
1.1
o
3
Normalized V
GS(th)
(V)
1.0
I
S
(A)
2
0.9
1
0.8
0
0.2
0.4
0.6
0.8
1
1.2
0.7
-50
-25
0
25
50
75
100
125
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
℃
)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
