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AP02N40P 参数 Datasheet PDF下载

AP02N40P图片预览
型号: AP02N40P
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 5 页 / 98 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP02N40P
RoHS-compliant Product
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
400V
1.6A
S
Description
AP02N40 uses rugged design with the best combination of fast
switching and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
applications. The good thermal performance and low package
cost, Contribute to its wide industry application.
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
400
+30
1.6
1
3
33
5
1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.8
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
1
200901203