AP02N40K-HF
3
2
T
A
=25 C
o
10V
8.0V
7.0V
I
D
, Drain Current (A)
T
A
=150
o
C
1.6
I
D
, Drain Current (A)
10V
8 .0V
7 .0V
6.0 V
2
1.2
6.0V
0.8
V
G
=5 .0V
1
V
G
=5.0V
0.4
0
0
4
8
12
16
20
24
28
32
0
0
5
10
15
20
25
30
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=0.4A
V
G
=10V
Normalized BV
DSS
(V)
1.1
Normalized R
DS(ON)
2
1
1
0.9
0.8
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature (
o
C )
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.2
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.1
Normalized V
GS(th)
(V)
1.2
1
I
S
(A)
T
j
= 150
o
C
1
T
j
= 25
o
C
0.9
0.8
0.7
0.1
0
0.2
0.4
0.6
0.8
1
0.6
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
