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AP01N60J 参数 Datasheet PDF下载

AP01N60J图片预览
型号: AP01N60J
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 4 页 / 62 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP01N60H/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
RoHS Compliant
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
600V
1.6A
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP01N60J) is available for low-profile
applications.
G
DS
TO-252(H)
G
D S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
600
±30
1.6
1
6
39
0.31
2
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
13
1.6
0.5
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.2
110
Units
℃/W
℃/W
200705052-1/4
Data & specifications subject to change without notice