AP01L60T
15
1000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
12
I
D
= 100m A
V
DS
= 480 V
C
iss
100
9
6
C (pF)
C
oss
10
3
C
rss
0
0
1
2
3
4
5
6
7
8
9
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
0.20
1.2
I
D
, Drain Current (A)
0.15
0.8
0.10
P
D
(W)
0.4
0
25
50
75
100
125
150
25
50
75
100
125
150
0.05
0.00
T
A
, Case Temperature (
o
C)
T
A
, Case Temperature( C)
o
Fig 9. Maximum Drain Current v.s.
Fig 10. Typical Power Dissipation
Case Temperature
V
DS
90%
V
G
Q
G
10V
Q
GS
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Q
GD
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4