AP01L60H/J
16
1000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
12
I
D
=1A
V
DS
=480V
100
C
iss
C (pF)
8
C
oss
10
4
C
rss
0
0
1.5
3
4.5
6
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
1
10us
I
D
(A)
0.1
0.1
0.05
100us
0.1
0.02
P
DM
1ms
0.01
t
T
T
c
=25
o
C
Single Pulse
0.01
1
10
100
Single Pulse
10ms
100ms
1000
10000
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
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