AP01L60H/J-H
1.5
1.0
T
C
=25 C
o
I
D
, Drain Current (A)
1.0
I
D
, Drain Current (A)
10V
6.0V
5.5V
5.0V
T
C
=150 C
o
10V
5.0V
0.8
4.5V
0.5
0.5
V
G
=4.5V
0.3
V
G
=4.0V
0.0
0
12
24
36
0.0
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=0.5A
V
G
=10V
Normalized BV
DSS
(V)
Normalized R
DS(ON)
1.1
2
1
1
0.9
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
3.5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1
3.0
T
j
= 150 C
o
T
j
= 25 C
o
0.1
V
GS(th)
(V)
2.5
2.0
1.6
-50
I
S
(A)
0.01
0
0.4
0.8
1.2
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
