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AP01L60AT_10 参数 Datasheet PDF下载

AP01L60AT_10图片预览
型号: AP01L60AT_10
PDF下载: 下载PDF文件 查看货源
内容描述: 先进的功率MOSFET采用先进的加工技术,以实现尽可能低的导通电阻,非常有效和costeffectiveness成效 [Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness]
分类和应用:
文件页数/大小: 5 页 / 111 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP01L60AT
16
1000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
12
Ciss
I
D
=0.1A
V
DS
=480V
100
8
C (pF)
Coss
10
4
Crss
0
1
0
2
4
6
8
1
10
19
28
Q
G
, Total Gate Charge (nC)
V
DS ,
Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
0.2
1
0.8
I
D
, Drain Current (A)
0.15
0.6
0.1
P
D
(W)
25
50
75
100
125
150
0.4
0.05
0.2
0
0
0
50
100
150
T
A
, Case Temperature (
o
C)
T
A
, Case Temperature (
o
C)
Fig 9. Maximum Drain Current v.s.
Fig 10. Typical Power Dissipation
Case Temperature
V
DS
90%
Q
G
10V
Q
GS
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Q
GD
V
G
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4