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AP0103GP-HF 参数 Datasheet PDF下载

AP0103GP-HF图片预览
型号: AP0103GP-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 119 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP0103GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
B
VDSS
@T
j
=125
o
C
40V
2.99mΩ
220A
R
DS(ON)
I
D
Description
AP0103 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance and
low package cost contribute to the worldwide popular package.
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
o
V
DS
@T
j
=125 C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
3
3
Rating
40
+20
220
80
80
320
250
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.5
62
Units
℃/W
℃/W
1
201304121
Data and specifications subject to change without notice