TP5531/TP5532/TP5534
1.8V, 34μA, RRIO, Zero Drift Op-amps
ESD, Electrostatic Discharge Protection
Symbol
Parameter
Condition
Minimum Level
Unit
HBM
CDM
Human Body Model ESD
MIL-STD-883H Method 3015.8
JEDEC-EIA/JESD22-C101E
7
2
kV
kV
Charged Device Model ESD
Electrical Characteristics
The boldface denotes the specifications which apply over the full operating temperature range, TA = -40°C to +125°C.
At TA = 27°C, VDD = 5V, RL = 10kΩ, VCM = VDD/2, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VDD
IQ
Supply Voltage Range
1.8
5.5
40
V
Quiescent current per amplifier
Over temperature
IO = 0
34
μA
55
μA
VOS
Input Offset Voltage
Input grounded, unity gain.
Vs = +1.8V to +5.5V
2
0.008
0.5
10
μV
dVOS/dT
PSRR
Vn
vs temperature
0.05
μV/°C
μV/V
μVpp
μVpp
nV/√Hz
vs power supply
input voltage noise, f=0.01Hz to 1Hz
input voltage noise, f=0.1Hz to 10Hz
Input voltage noise density, f=1kHz
0.4
1.1
en
55
CIN
Input capacitor, Differential
Input capacitor, Common-Mode
Input Bias Current
Over temperature
Input offset current
3
2
pF
pF
IB
±50
±200
800
±400
pA
pA
pA
V
dB
mV
mV
mA
pF
IOS
±100
VCM
CMRR
VO
Common-mode voltage range
Common-mode rejection ratio
Output Voltage Swing from rail
Over temperature
(V-)–0.1
(V+)+0.1
110
130
RL=10kΩ
RL=10kΩ
5
10
10
±60
ISC
CL
Short-circuit current
Maximum Capacitive Load
Unity Gain Bandwidth
Slew rate
Overload recovery time
Settling time to 0.01%
1,000
350
0.16
60
GBWP
SR
tOR
CL=100pF
G=+1, CL=100pF
G=-10
kHz
V/μs
μs
tS
CL=100pF
40
μs
(V-)+100mV<VO<(V+)-100mV,
RL = 100kΩ
AVOL
Open-Loop Voltage Gain
100
120
dB
SC70-5 (SOT353)
SOT23-5
250
200
210
158
83
MSOP-8
Thermal Resistance Junction to
Ambient
θJA
°C/W
SOIC-8
SOIC-14
TSSOP-14
100
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