ABSK12S THRU ABSK110S
Thermal Characteristics （T =25℃Unless otherwise specified）
■
a
ABSK12S
ABSK14S
ABSK16S
ABSK18S
ABSK110S
PARAMETER
SYMBOL
UNIT
Between junction and
ambient, On alumina
substrate
Between junction and
ambient, On glass-
epoxi substrate
76
R
θJ-A
Thermal
Resistance
℃/W
134
20
Between junction and
lead
R
θJ-L
Ordering Information (Example)
■
PACKING
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
UNIT WEIGHT(g)
DELIVERY MODE
CODE
F1
Approximate 0.095
4000
8000
64000
13” reel
ABSK12S-ABSK110S
Characteristics (Typical)
FIG1：Io-TA Curve
■
FIG2：Surge Forward Current Capability
40
35
30
正弦半波
half sine wave
1.5
1.2
0.9
0.6
0.3
0
0
8.3ms
8.3ms
1cycle
On alumina substrate
不重复
non-repetitive
Tj=25℃
25
20
15
On glass-epoxi substrate
10
5
1
2
5
10
20
50
100
`
Number of Cycles
0
40
80
120
Ambient Tempreture(℃)
160
FIG4：Typical Reverse Characteristics
FIG3: Forward Voltage
6
10
1
ABSK12S~ABSK14S
4
Tj=125℃
2
1
0.5
ABSK18S~ABSK110S
0.1
ABSK16S
Tj=25℃
Ta=25℃
0.1
0.01
0.05
ABSK12S-ABSK14S
ABSK16S
0.02
0.01
ABSK18S-ABSK110S
0.001
0
20
40
60
80
100
0.4
0.5
0.6
0.7
0.8
0.9
Percent of Rated Peak Reverse Voltage(%)
Instantaneous Forward Voltage(V)
2 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S008
Rev. 2.0, 28-Apr-14
www.21yangjie.com
YANGJIE [ YANGZHOU YANGJIE ELECTRONIC CO., LTD ]
