50A CELL SERIES
硅整流器 Silicon Rectifier
■特征 Features
■外形尺寸和印记Outline Dimensions and Mark
●
Io
50A
50A CELL
●
VRRM
100V~1000V
●
●
电极表面高可焊性
Silicone Rubber
Bottom Electrode
.087(2.2)
.071(1.8)
Solderable electrode surface
耐正向浪涌电流能力高
High surge forward current capability
用途 Applications
■
■
●
作一般单相整流用
.326(8.3)
.319(8.1)
Upper Electrode
General purpose 1 phase
rectifier applications
Dimensions in inches and (millimeters)
极限值(绝对最大额定值)
Limiting Values(Absolute Maximum Rating)
50A
符号
Symbol Unit
单位
参数名称
Item
条件
Conditions
100V200V400V600V800V1000V
反向重复峰值电压
Repetitive Peak Reverse Voltage
平均整流输出电流
Average Rectified Output
Current
VRRM
IO
V
A
100 200 400 600 800 1000
60HZ 正弦波,电阻负载,Ta=50℃
60HZ sine wave, R- load, Ta=50℃
50
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward
Current
60HZ正弦波,一个周期,Ta=25℃
60HZ sine wave, 1 cycle, Ta=25℃
IFSM
A
500
1ms≤t<8.3ms T =25℃,单个二
极管
j
正向浪涌电流的平方对电流浪
涌持续
时间的积分值
I2t
A2s
1042
1ms≤t<8.3ms T =25℃,Rating of
j
Current Squared Time
per diode
存储温度
Tstg
Tj
-55 ~+150
-55 ~+125
℃
℃
Storage Temperature
结温
Junction Temperature
■电特性 (T =25℃ 除非另有规定)
a
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
参数名称
Item
符号 单位
Symbol Unit
测试条件
Test Condition
最大值
Max
正向峰值电压
Peak Forward Voltage
反向峰值电流
IFM=50A,脉冲测试,单个二极管的额定值
IFM=50A, Pulse measurement, Rating of per diode
VFM
IRRM1
IRRM2
V
1.1
T =25℃
a
5
VRM=VRRM
μA
Peak Reverse Current
T =125℃
a
500
结和环境之间
Between junction and ambient
热阻
1.5
R
θJ-A
℃/W
Thermal Resistance
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Document Number 0085
Rev. 1.0, 22-Sep-11