X22C12
MODE SELECTION
CE
WE
RECALL
STORE
I/O
Mode
(3)
H
L
X
H
L
H
H
H
H
L
H
H
H
H
H
H
L
Output High Z
Output Data
Not Selected
Read RAM
L
Input Data High
Input Data Low
Output High Z
Output High Z
Output High Z
Output High Z
Write “1” RAM
Write “0” RAM
Array Recall
L
L
X
H
X
H
H
X
H
X
L
Array Recall
(4)
(4)
H
H
Nonvolatile Store
L
Nonvolatile Store
3817 PGM T05.1
ENDURANCE AND DATA RETENTION
Parameter
Min.
Units
Endurance
100,000
1,000,000
100
Data Changes Per Bit
Store Cycles
Years
Store Cycles
Data Retention
3817 PGM T06
POWER-UP TIMING
Symbol
Parameter
Max.
Units
(5)
t
Power-up to Read Operation
100
5
µs
PUR
(5)
t
Power-up to Write or Store Operation
ms
PUW
3817 PGM T07
EQUIVALENT A.C. LOAD CIRCUIT
A.C. CONDITIONS OF TEST
Input Pulse Levels
0V to 3V
10ns
5V
Input Rise and
Fall Times
919Ω
Input and Output
Timing Levels
1.5V
OUTPUT
3817 PGM T04.1
497Ω
100pF
3815 FHD F09.1
Notes: (3) Chip is deselected but may be automatically completing a store cycle.
(4) STORE = LOW is required only to initiate the store cycle, after which the store cycle will be automatically completed
(e.g. STORE = X).
(5) t
and t
are the delays required from the time V
is stable until the specified operation can be initiated. These
PUR
PUW
parameters are periodically sampled and not 100% tested.
CC
4