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X20C17SM-55 参数 Datasheet PDF下载

X20C17SM-55图片预览
型号: X20C17SM-55
PDF下载: 下载PDF文件 查看货源
内容描述: [Non-Volatile SRAM, 2KX8, 55ns, CMOS, PDSO28, PLASTIC, SOIC-28]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 12 页 / 178 K
品牌: XICOR [ XICOR INC. ]
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X20C17  
ABSOLUTE MAXIMUM RATINGS  
COMMENT  
Temperature under bias ........................–65 to +135°C  
Storage temperature ............................–65 to +150°C  
Voltage on any pin with  
Stresses above those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device.  
This is a stress rating only and the functional operation of  
the device at these or any conditions other than those indi-  
cated in the operational sections of this specification is not  
implied. Exposure to absolute maximum rating conditions  
for extended periods may affect device reliability.  
respect to V .........................................1V to +7V  
SS  
D.C. output current ............................................. 10mA  
Lead temperature (soldering, 10 seconds).........300°C  
RECOMMENDED OPERATING CONDITIONS  
Temperature  
Commercial  
Industrial  
Min.  
0°C  
Max.  
+70°C  
+85°C  
+125°C  
Supply Voltage  
Limits  
X20C17  
4.5V to 5.25V  
–40°C  
–55°C  
Military  
D.C. OPERATING CHARACTERISTICS (Over recommended operating conditions unless otherwise specified.)  
Limits  
Symbol  
Parameter  
Current (Active)  
Min.  
Max.  
Units  
Test Conditions  
l
V
100  
mA  
WE = V , CE = OE = V , Address  
IH  
IL  
Inputs = 0.4V/2.4V Levels  
CC1  
CC  
@ f = 20MHz, All I/Os = Open  
(2)  
I
V
V
V
Current During AUTOSTORE  
Standby Current (TTL Input)  
Standby Current (CMOS Input)  
2.5  
10  
mA  
mA  
µA  
µA  
µA  
V
All I/Os = Open  
CC2  
CC  
CC  
CC  
I
I
All Inputs = V , All I/Os = Open  
IH  
SB1  
250  
10  
All Inputs = V – 0.3V, All I/Os = Open  
CC  
SB2  
I
Input Leakage Current  
Output Leakage Current  
Input LOW Voltage  
V
V
= V to V  
SS CC  
LI  
IN  
I
10  
= V to V , CE = V  
OUT SS CC IH  
LO  
(1)  
V
–1  
2
0.8  
IL  
(1)  
V
Input HIGH Voltage  
Output LOW Voltage  
Output HIGH Voltage  
V
+ 1  
V
IH  
CC  
V
0.4  
V
I = 4mA  
OL  
OL  
V
2.4  
V
I = –4mA  
OH  
OH  
POWER-UP TIMING  
Symbol  
Parameter  
Max.  
Units  
(2)  
t
Power-Up to RAM Operation  
Power-Up to Nonvolatile Operation  
100  
5
µs  
PUR  
(2)  
PUW  
t
ms  
CAPACITANCE T = +25°C, f = 1MHz, V  
= 5V.  
A
CC  
Symbol  
Test  
Max.  
10  
Units  
pF  
Conditions  
(2)  
I/O  
C
Input/Output Capacitance  
Input Capacitance  
V
= 0V  
= 0V  
I/O  
(2)  
IN  
C
6
pF  
V
IN  
Notes: (1) V min. and V max. are for reference only and are not tested.  
IL  
IH  
(2) This parameter is periodically sampled and not 100% tested.  
Characteristics subject to change without notice. 4 of 12