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X20C16DM-35 参数 Datasheet PDF下载

X20C16DM-35图片预览
型号: X20C16DM-35
PDF下载: 下载PDF文件 查看货源
内容描述: 高速自动存储™ NOVRAM [High Speed AUTOSTORE⑩ NOVRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 21 页 / 96 K
品牌: XICOR [ XICOR INC. ]
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X20C16  
2
DEVICE OPERATION  
matically stored from the RAM into the E PROM array  
whenever V falls below the preset Autostore thresh-  
CC  
The CE, OE, WE, and NE inputs control the X20C16  
operation. The X20C16 byte-wide NOVRAM uses a  
2-line control architecture to eliminate bus contention in  
a system environment. The I/O bus will be in a high  
impedance state when either OE or CE is HIGH, or  
when NE is LOW.  
old. This feature is enabled by performing the first two  
stepsforthesoftwarestorewiththecommandcombina-  
tion being 555[H]/CC[H].  
The AUTOSTORE feature is disabled by issuing the  
three step command sequence with the command com-  
binationbeing555[H]/CD[H].TheAUTOSTOREfeature  
RAM Operations  
will also be reset if V falls below the power-up reset  
CC  
RAM read and write operations are performed as they  
would be with any static RAM. A read operation requires  
CE and OE to be LOW with WE and NE HIGH. A write  
operation requires CE and WE to be LOW with NE  
HIGH. There is no limit to the number of read or write  
operationsperformedtotheRAMportionoftheX20C16.  
threshold (approximately 3.5V) and is then raised back  
into the operation range.  
Write Protection  
The X20C16 supports two methods of protecting the  
nonvolatile data.  
Memory Transfer Operations  
—If after power-up the AUTOSTORE feature is not  
enabled, no AUTOSTORE can occur.  
There are two memory transfer operations: a recall  
operationwherebythedatastoredintheE PROMarray  
2
—V Sense – All functions are inhibited when V is  
CC  
CC  
is transferred to the RAM array; and a store operation  
which causes the entire contents of the RAM array to be  
3.0V typical.  
2
stored in the E PROM array.  
SYMBOL TABLE  
The following symbol table provides a key to under-  
standing the conventions used in the device timing  
diagrams. The diagrams should be used in conjunction  
with the device timing specifications to determine actual  
device operation and performance, as well as device  
suitability for user’s application.  
Recall operations are performed automatically upon  
power-up and under host system control when NE, OE  
and CE are LOW and WE is HIGH. The recall operation  
takes a maximum of 5µs.  
SDP (Software Data Protection)  
There are two methods of initiating a store operation.  
The first is the software store command. This command  
takes the place of the hardware store employed on the  
X20C04. This command is issued by entering into the  
special command mode: NE, CE, and WE strobe LOW  
while at the same time a specific address and data  
combination is sent to the device. This is a three step  
operation: the first address/data combination is 555[H]/  
AA[H];thesecondcombinationis2AA[H]/55[H];andthe  
final command combination is 555[H]/33[H]. This se-  
quence of pseudo write operations will immediately  
initiate a store operation. Refer to the software com-  
mand timing diagrams for details on set and hold times  
for the various signals.  
WAVEFORM  
INPUTS  
OUTPUTS  
Must be  
steady  
Will be  
steady  
May change  
from LOW  
to HIGH  
Will change  
from LOW  
to HIGH  
May change  
from HIGH  
to LOW  
Will change  
from HIGH  
to LOW  
Don’t Care:  
Changes  
Allowed  
Changing:  
State Not  
Known  
N/A  
Center Line  
is High  
Impedance  
The second method of storing data is with the  
AUTOSTORE command. When enabled, data is auto-  
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