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X2016DM-55 参数 Datasheet PDF下载

X2016DM-55图片预览
型号: X2016DM-55
PDF下载: 下载PDF文件 查看货源
内容描述: [Memory IC,]
分类和应用:
文件页数/大小: 21 页 / 515 K
品牌: XICOR [ XICOR INC. ]
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X20C16  
PIN NAMES  
Symbol  
AUTOSTORE Output (AS)  
AS is an open drain output which, when asserted indi-  
Description  
Address inputs  
cates V  
has fallen below the AUTOSTORE threshold  
CC  
A –A  
0
10  
(V  
). AS may be wire-ORed with multiple open drain  
ASTH  
outputs and used as an interrupt input to a microcontroller.  
I/O –I/O  
0
Data input/output  
Write enable  
Chip enable  
Output enable  
Nonvolatile enable  
AUTOSTORE output  
+5V  
7
WE  
CE  
OE  
NE  
AS  
DEVICE OPERATION  
The CE, OE, WE and NE inputs control the X20C16  
operation.The X20C16 byte-wide NOVRAM uses a 2-line  
control architecture to eliminate bus contention in a sys-  
tem environment.The I/O bus will be in a high impedance  
state when either OE or CE is HIGH, or when NE is LOW.  
V
CC  
V
Ground  
SS  
RAM Operations  
NC  
No connect  
RAM read and write operations are performed as they  
would be with any static RAM. A read operation requires  
CE and OE to be LOW with WE and NE HIGH. A write  
operation requires CE and WE to be LOW with NE HIGH.  
There is no limit to the number of read or write operations  
performed to the RAM portion of the X20C16.  
PIN DESCRIPTIONS  
Addresses (A –A )  
0
10  
The Address inputs select an 8-bit memory location  
during a read or write operation.  
Memory Transfer Operations  
Chip Enable (CE)  
There are two memory transfer operations: a recall  
operation whereby the data stored in the EEPROM  
array is transfered to the RAM array; and a store oper-  
ation which causes the entire contents of the RAM  
array to be stored in the EEPROM array.  
The Chip Enable input must be LOW to enable all read/  
write operations. When CE is HIGH, power consump-  
tion is reduced.  
Output Enable (OE)  
Recall operations are performed automaticaly upon  
power-up and under host system control when NE, OE  
and CE are LOW and WE is HIGH. The recall opera-  
tion takes a maximum of 5µs.  
The Output Enable input controls the data output buffers  
and is used to initiate read and recall operations. Out-  
put Enable LOW disables a store operation regardless  
of the state of CE, WE, or NE.  
SDP (Software Data Protection)  
Data In/Data Out (I/O –I/O )  
0
7
There are two methods on initiating a store operation.  
The first is the software store command. This com-  
mand takes the place of the hardware store employed  
on the X20C04. This command is issued by entering  
into the special command mode: NE, CE, and WE  
strobe LOW while at the same time a specific address  
and data combination is sent to the device. This is a  
three step operation: the first address/data combina-  
tion is 555[H]/AA[H]; the second combination is  
2AA[H]/55[H]; and the final command conbination is  
555[H]/33[H]. This sequence of pseudo write opera-  
tions will immediately initiate a store operation. Refer  
to the software command timing diagrams for details  
on set and hold times for the various signals.  
Data is written to or read from the X20C16 through the  
I/O pins. The I/O pins are placed in the high impedance  
state when either CE or OE is HIGH or when NE is LOW.  
Write Enable (WE)  
The Write Enable input controls the writing of data to  
the static RAM.  
Nonvolatile Enable (NE)  
The Nonvolatile Enable input controls the recall func-  
tion to the EEPROM array.  
Characteristics subject to change without notice. 3 of 21  
REV 1.0 6/21/00  
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