FP31QF
2-Watt HFET
The Communications Edge
TM
Product Information
Application Circuit: 870 – 960 MHz (FP31QF-PCB900)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +9 V, I
ds
= 450 mA, 25
°
C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+18 dBm / tone, 1 MHz spacing)
MHz
dB
dB
dB
dBm
dBm
dB
dBm
870
18.3
-15
-9.3
+33.9
915
18
-20
-12
+34
+46
960
17.7
-16
-16
+33.7
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
3.4
3.5
+27.8
3.5
Bill of Materials
Ref. Desig.
C1, C4, C8, C10
C2, C3
C7, C11
C12
L1, L2
L3
R1
R2
Q1
C5, C6
•
•
•
•
Circuit Board Material: .014” FR-4 (ε
r
= 4.6),
4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
The main microstrip line has a line impedance of 50 .
Value
100 pF
4.7 pF
1000 pF
0.1
µF
27 nH
3.3 nH
10
51
FP31QF
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Wirewound chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 2W HFET
Do Not Place
Size
0603
0603
0603
1206
0805
0603
0603
0603
QFN 6x6
C2
C3
The C2 and C3 placements are at silk screen markers, “H” and “9.5”, respectively.
The via hole spacing along the main microstrip line is .040”.
The distance from the edge of the FP31QF to the closer edge of L3 is .305”.
The transmission line lengths shown in the schematic are from the FP31QF
device edge to the component edge.
ID=C8
C=100 pF ID=C7
C=1000 pF
-Vgg
Vds=9V @ 450 mA
ID=C12
C=1e5 pF
ID=R2
R=51 Ohm
ID=C11
C=1000 pF
ID=C10
C=100 pF
ID=C1
C=100 pF
TLINP
ID=TL1
Z0=50 Ohm
L=500 mil
Eeff=3.46
Loss=0
F0=0 MHz
ID=L3
L=3.3 nH
ID=L1
L=27 nH
NET="FP31QF"
2
ID=L2
L=27 nH
ID=C4
C=100 pF
1
ID=R1
R=10 Ohm
ID=C2
C=4.7 pF
TLINP
ID=TL2
Z0=50 Ohm
L=520 mil
Eeff=3.46
Loss=0
F0=0 MHz
ID=C3
C=4.7 pF
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 3 of 12 October 2006
WJCI [ WJ COMMUNICATION. INC. ]
