FP2189
1 - Watt HFET
Product Information
Reference Design: 3400 – 3600 MHz
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, I = 250 mA, 25°C
S-Parameters
ds
20
10
Frequency
MHz
3400
12.6
-15
3500
13.0
-28
3600
12.9
-12
S21 – Gain
dB
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
dB
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)
0
dB
-7.6
-7.9
-9.1
dBm
+30.9 +30.9 +30.8
-10
-20
-30
Output IP3
dBm
+43.8 +43.6 +43.8
(+15 dBm / tone, 1 MHz spacing)
The 3.4 – 3.6 GHz Reference Circuit is shown for design purposes only. An
evaluation board is not readily available for this application. The reader can
obtain an FP2189-PCB2140S evaluation board and modify it with the circuit
shown to achieve the performance shown in this reference design.
3.2
3.3
3.4
3.5
3.6
3.7
3.8
Frequency (GHz)
Vds=8V @ 250 mA
CAP
-Vgg
CAP
ID=C8
ID=C3
C=1e4 pF
C=33 pF
RES
ID= R1
CAP
R=20 Ohm
CAP
ID=C6
ID=C2
C=1000 pF
C=DNP pF
CAP
ID=C7
C=22 pF
SUBCKT
ID= Q1
NET="FP2189"
IND
ID=L1
IND
IND
L=5.6 nH
ID=L2
CAP
RES
2
PORT
P= 1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
ID=L3
ID=C1
ID=R2
L= 15 nH
L=2.7 nH
C=22 pF
R=6.2 Ohm
1
CAP
ID=C9
C=22 pF
CAP
CAP
CAP
ID=C10
ID=C5
ID=C4
C=0.3 pF
C=0.7 pF
C=1.1 pF
Bill of Materials
Part style
Ref. Desig.
C1, C7, C9
C3
C4
C5
C6
C8
C10
L1
L2
Value
22 pF
33 pF
1.1 pF
0.7 pF
Size
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
0603
0805
0603
0603
0603
1206
0603
0603
0603
0603
0603
0603
SOT-89
1000 pF
0.1 mF
0.3 pF
5.6 nH
15 nH
2.7 nH
20 O
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
L3
R1
R2
Q1
6.2 O
Chip resistor
FP2189
WJ 1W HFET
C2
Do Not Place
14 mil GETEKTM ML200DSS (er = 4.2)
The main microstrip line has a line impedance of 50 O.
Specifications and information are subject to change without notice.
September 2004
WJ Communications, Inc · Phone 1-800- WJ1-4401 · FAX: 408-577-6621 · e- mail: sales@wj.com · Web site: www.wj.com
WJCI [ WJ COMMUNICATION. INC. ]
