1 Watt, High Linearity InGaP HBT Amplifier
ECP100D
The Communications Edge
TM
Product Information
Application Note: Reduced Bias Configurations
The ECP100D, like the AH215-S8 can be configured to operate with lower bias current by varying the bias-adjust resistor –
R1. The recommended circuit configurations shown previously in this datasheet have the device operating in Class A
operation. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower
the ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH215-
S8 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency
applications will produce similar performance results.
AH215S8-PCB2140 Performance Data
R1
(ohms)
51
68
100
130
180
Icq
(mA)
450
400
350
300
250
Pdiss
(W)
2.25
2.00
1.75
1.50
1.25
P1dB
(dBm)
+31.0
+30.9
+30.8
+30.6
+30.5
OIP3
(dBm)
+47.1
+46.4
+46.4
+45.5
+43.6
RES
ID=R1
R=51 Ohm
CAP
ID=C5
C=1000 pF
RES
ID=R2
R=22 Ohm
+5 V
+5.6 V zener
CAP
ID=C4
C=10000000 pF
CAP
ID=C7
C=1000 pF
CAP
ID=C6
C=10 pF
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=56 pF
RES
ID=R3
R=51 Ohm
TLINP
ID=FR1
Z0=50 Ohm
L=375 mil
Eeff=3.16
Loss =0
F0=0 MHz
13
12
11
14
15
16
1
IND
ID=L1
L=18 nH
size 1008
SUBCKT
ID=ECP100D
NET="QFN"
2
CAP
ID=C3
C=56 pF
PORT
P=2
Z=50 Ohm
10
9
3
4
CAP
ID=C2
C=56 pF
·The transmission line length are from the
edge of the ECP100D pins to the cent er of t he component.
All passive components are of size 0603 unless otherwise noted.
CAP
I D=C8
C=1.0 pF
8
7
6
5
This component should be plac ed at silk s creen mark er
"G" on the WJ evaluation board as shown.
TLINP
ID=FR4
Z0=50 Ohm
L=175 mil
Eeff=3.16
Loss=0
F0=0 MHz
CAP
ID=C9
C=2.4 pF
This component should be placed
at silk screen marker "3" on the
WJ evaluation board as shown.
11.5
11
2.14GHz Gain vs. Output Power
50
2.14GHz OIP3 vs. Output Power per Tone
45
10
9.5
9
8.5
16
OIP3 (dBm)
Gain (dB)
10.5
Idq=450mA ’Class A’
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
40
Idq=450mA ’Class A’
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
10
12
14
16
18
20
22
24
35
30
18
20
22
24
26
28
30
32
Output Power (dBm)
W-CDMA ACLR vs. Output Channel Power
3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset
Power Out per Tone (dBm)
100
CW PAE vs. Output Power
Idq=450mA ’Class A’
Idq=400mA
Idq=350mA
-35
Idq=450mA ’Class A’
-40
Idq=400mA
Idq=300mA
Idq=250mA
ACLR (dBc)
-45
-50
-55
-60
-65
12
PAE (%)
Idq=350mA
Idq=300mA
Idq=250mA
10
1
14
16
18
20
22
24
W-CDMA Channel Power Out (dBm)
16
18
20
CW Tone Power Out (dBm)
22
24
26
28
30
32
Specifications and information are subject to change without notice
¨
¨
¨
¨
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 6 of 7
April 2006
WJCI [ WJ COMMUNICATION. INC. ]
