ECG055B
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +6 V, R
bias
= 18
Ω
, I
cc
= 65 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
20.7
-36
-27
+18.2
+33
3.4
500
20.6
-31
-23
+18
+33.5
3.6
900
20.5
-26.3
-19.1
+18.1
+34.5
3.4
1900
20.1
-19.7
-12.9
+18.2
+33.5
3.4
2140
20.1
-18.5
-12.2
+17.8
+32.9
3.4
2400
19.9
-17.5
-11
+17.8
+32
3.8
3500
19.3
-14
-8.1
+17.2
5800
17.2
-8.9
-4.1
1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, Device Voltage = 4.8 V, Rbias = 18
Ω,
Icc = 65 mA typical, 50
Ω
System.
2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain
22
20
0
Return Loss
160
S11
S22
120
Icc vs. Vde
S21 (dB)
-10
-15
-20
-25
Icc (mA)
18
16
14
12
10
0
1000
2000
3000
4000
5000
6000
S11 & S22 (dB)
-5
80
40
25°C
0
4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0
0
1000
2000
3000
4000
5000
6000
Frequency (MHz)
OIP3 vs. Frequency
40
35
OIP3 (dBm)
30
25
2.5
5.0
4.5
4.0
Frequency (MHz)
Noise Figure
20
Vde (V)
P1dB vs. Frequency
3.5
3.0
25°C
20
1
-40°C
85°C
4
P1dB (dBm)
18
NF (dB)
16
25°C
14
-40°C
85°C
4
2
3
Frequency (MHz)
2.0
800
1000
1200
1400
1600
1800
2000
1
Frequency (MHz)
2
3
Frequency (MHz)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 2 of 4
April 2007